SSM3J132TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 5.4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Description: MOSFET P-CH 12V 5.4A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J132TU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 5.4A UFM, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V.
Weitere Produktangebote SSM3J132TU,LF nach Preis ab 0.18 EUR bis 1.09 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SSM3J132TU,LF | Hersteller : Toshiba | Trans MOSFET P-CH Si 12V 5.4A 3-Pin UFM T/R |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SSM3J132TU,LF | Hersteller : Toshiba | Trans MOSFET P-CH Si 12V 5.4A 3-Pin UFM T/R |
auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
SSM3J132TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 12V 5.4A UFM Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V |
auf Bestellung 9116 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
SSM3J132TU,LF | Hersteller : Toshiba | MOSFET Small-signal MOSFET ID -5.4A, VDSS -12V |
auf Bestellung 14340 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
SSM3J132TU,LF | Hersteller : Toshiba | Trans MOSFET P-CH Si 12V 5.4A 3-Pin UFM T/R |
Produkt ist nicht verfügbar |