SSM3J144TU,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
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Technische Details SSM3J144TU,LXHF Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UFM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): +6V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V.
Weitere Produktangebote SSM3J144TU,LXHF nach Preis ab 0.28 EUR bis 1.12 EUR
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SSM3J144TU,LXHF | Hersteller : Toshiba |
MOSFET SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-3.2A |
auf Bestellung 8688 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM3J144TU,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
auf Bestellung 5095 Stücke: Lieferzeit 21-28 Tag (e) |
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