SSM3J15CT,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL LOW RON PCH MOSFETS VDSS:-
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
| Anzahl | Preis |
|---|---|
| 10000+ | 0.066 EUR |
| 20000+ | 0.06 EUR |
| 30000+ | 0.056 EUR |
| 50000+ | 0.053 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J15CT,L3F Toshiba Semiconductor and Storage
Description: SMALL LOW RON PCH MOSFETS VDSS:-, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1.7V @ 100µA, Supplier Device Package: CST3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V.
Weitere Produktangebote SSM3J15CT,L3F nach Preis ab 0.056 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SSM3J15CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: SMALL LOW RON PCH MOSFETS VDSS:- Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
auf Bestellung 60872 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SSM3J15CT,L3F | Hersteller : Toshiba |
MOSFETs Small Low Ron Pch MOSFETs Vdss:-30V, Id:-0.1A, Pd: 0.1W |
auf Bestellung 18745 Stücke: Lieferzeit 10-14 Tag (e) |
|