SSM3J15FU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.054 EUR |
| 6000+ | 0.05 EUR |
| 9000+ | 0.038 EUR |
| 15000+ | 0.037 EUR |
| 21000+ | 0.036 EUR |
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Technische Details SSM3J15FU,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM, Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Supplier Device Package: USM, Vgs(th) (Max) @ Id: 1.7V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3J15FU,LF nach Preis ab 0.063 EUR bis 0.41 EUR
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SSM3J15FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 100MA USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.7V @ 100µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V |
auf Bestellung 38297 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J15FU,LF | Toshiba |
MOSFET Small-signal MOSFET High Speed Switching |
auf Bestellung 73235 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM3J15FU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 38297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 92+ | 0.19 EUR |
| 197+ | 0.09 EUR |
| 500+ | 0.08 EUR |
| 1000+ | 0.077 EUR |
| SSM3J15FU,LF |
|
Hersteller: Toshiba
MOSFET Small-signal MOSFET High Speed Switching
MOSFET Small-signal MOSFET High Speed Switching
auf Bestellung 73235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.41 EUR |
| 10+ | 0.34 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.081 EUR |
| 3000+ | 0.072 EUR |
| 6000+ | 0.063 EUR |