SSM3J16FU(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL LOW RON PCH MOSFETS VDSS:-
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J16FU(TE85L,F) Toshiba Semiconductor and Storage
Description: SMALL LOW RON PCH MOSFETS VDSS:-, Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Active, Supplier Device Package: USM, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3J16FU(TE85L,F) nach Preis ab 0.15 EUR bis 0.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SSM3J16FU(TE85L,F) | Toshiba Semiconductor and Storage |
Description: SMALL LOW RON PCH MOSFETS VDSS:- Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Active Supplier Device Package: USM Vgs(th) (Max) @ Id: 1.1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM3J16FU(TE85L,F) |
|
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL LOW RON PCH MOSFETS VDSS:-
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Description: SMALL LOW RON PCH MOSFETS VDSS:-
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.15 EUR |