SSM3J16FU(TE85L,F) Toshiba Semiconductor and Storage

Description: SMALL LOW RON PCH MOSFETS VDSS:-, Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Active, Supplier Device Package: USM, Vgs(th) (Max) @ Id: 1.1V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).