auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.10 EUR |
| 6000+ | 0.09 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J332R,LF Toshiba
Description: MOSFET P-CH 30V 6A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V.
Weitere Produktangebote SSM3J332R,LF nach Preis ab 0.08 EUR bis 0.64 EUR
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SSM3J332R,LF | Hersteller : Toshiba |
 Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J332R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J332R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
auf Bestellung 49601 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J332R,LF | Hersteller : Toshiba |
MOSFETs SM Sig P-CH MOS 12V VGSS -6A -30VDSS |
auf Bestellung 278253 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J332R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J332R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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| SSM3J332R,LF | Hersteller : TOSHIBA |
SOT23/SOT323 |
auf Bestellung 3996 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3J332R,LF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 30V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |