| Anzahl | Privatkunde |
|---|---|
| 1147+ | 0.15 EUR |
| 1243+ | 0.14 EUR |
| 1356+ | 0.13 EUR |
| 1491+ | 0.11 EUR |
| 3000+ | 0.099 EUR |
| 6000+ | 0.086 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J334R,LF Toshiba
Description: MOSFET P-CH 30V 4A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V.
Weitere Produktangebote SSM3J334R,LF nach Preis ab 0.074 EUR bis 0.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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SSM3J334R,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET P-CH 30V 4A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V |
auf Bestellung 65010 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J334R,LF | Toshiba |
Trans MOSFET P-CH Si 30V 4A 3-Pin SOT-23F T/R |
auf Bestellung 7499 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J334R,LF | Toshiba |
MOSFETs P-Ch U-MOSVI FET ID -4A -30VDSS 280pF |
auf Bestellung 45304 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J334R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 4A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V |
auf Bestellung 65121 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3J334R,LF | TOSHIBA |
SOT23/SOT323 |
auf Bestellung 2127 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SSM3J334R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 65010 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.17 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| 15000+ | 0.13 EUR |
| 30000+ | 0.12 EUR |
| SSM3J334R,LF |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 30V 4A 3-Pin SOT-23F T/R
Trans MOSFET P-CH Si 30V 4A 3-Pin SOT-23F T/R
auf Bestellung 7499 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 616+ | 0.29 EUR |
| 1044+ | 0.17 EUR |
| 1064+ | 0.15 EUR |
| 1147+ | 0.14 EUR |
| 1243+ | 0.12 EUR |
| 1356+ | 0.11 EUR |
| 1491+ | 0.093 EUR |
| 3000+ | 0.083 EUR |
| 6000+ | 0.074 EUR |
| SSM3J334R,LF |
|
Hersteller: Toshiba
MOSFETs P-Ch U-MOSVI FET ID -4A -30VDSS 280pF
MOSFETs P-Ch U-MOSVI FET ID -4A -30VDSS 280pF
auf Bestellung 45304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.73 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.15 EUR |
| 6000+ | 0.13 EUR |
| SSM3J334R,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
auf Bestellung 65121 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 44+ | 0.48 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| SSM3J334R,LF |
|
Hersteller: TOSHIBA
SOT23/SOT323
SOT23/SOT323
auf Bestellung 2127 Stücke:
Lieferzeit 21-28 Tag (e)