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SSM3J355R,LF

SSM3J355R,LF Toshiba Semiconductor and Storage

SSM3J355R_datasheet_en_20161130.pdf?did=55743&prodName=SSM3J355R
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.15 EUR
6000+0.13 EUR
15000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J355R,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 6A SOT23F, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM3J355R,LF nach Preis ab 0.11 EUR bis 0.69 EUR

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SSM3J355R,LF SSM3J355R,LF Toshiba SSM3J355R_datasheet_en_20240723-1128713.pdf MOSFETs LowON Res MOSFET ID=-6A VDSS=-20V
auf Bestellung 236396 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.65 EUR
10+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.16 EUR
3000+0.11 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J355R,LF SSM3J355R,LF Toshiba Semiconductor and Storage SSM3J355R_datasheet_en_20161130.pdf?did=55743&prodName=SSM3J355R Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
auf Bestellung 28735 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J355R,LF Toshiba SSM3J328R_Toshiba.pdf P-канальний ПТ, Udss, В = 20, Id = 6 А, Ciss, пФ @ Uds, В = 1030 @ 10, Rds = 30,1 мОм @ 4 A, 4,5 В, Ugs(th) = 1 В @ 1 мА, Р, Вт = 1, Тексп, °C = до 150, Тип монт. = smd,... Транзистори Корпус: SOT-23F-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 2699 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J355R,LF SSM3J355R_datasheet_en_20240723-1128713.pdf
SSM3J355R,LF
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=-6A VDSS=-20V
auf Bestellung 236396 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+0.65 EUR
10+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.16 EUR
3000+0.11 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J355R,LF SSM3J355R_datasheet_en_20161130.pdf?did=55743&prodName=SSM3J355R
SSM3J355R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
auf Bestellung 28735 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
Mindestbestellmenge: 26 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J355R,LF SSM3J328R_Toshiba.pdf
Hersteller: Toshiba
P-канальний ПТ, Udss, В = 20, Id = 6 А, Ciss, пФ @ Uds, В = 1030 @ 10, Rds = 30,1 мОм @ 4 A, 4,5 В, Ugs(th) = 1 В @ 1 мА, Р, Вт = 1, Тексп, °C = до 150, Тип монт. = smd,... Транзистори Корпус: SOT-23F-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 2699 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH