Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > SSM3J355R,LF
SSM3J355R,LF

SSM3J355R,LF Toshiba Semiconductor and Storage

SSM3J355R_datasheet_en_20161130.pdf?did=55743&prodName=SSM3J355R Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
15000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM3J355R,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 6A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V.

Weitere Produktangebote SSM3J355R,LF nach Preis ab 0.11 EUR bis 0.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM3J355R,LF SSM3J355R,LF Hersteller : Toshiba SSM3J355R_datasheet_en_20240723-1128713.pdf MOSFETs LowON Res MOSFET ID=-6A VDSS=-20V
auf Bestellung 236396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.65 EUR
10+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.16 EUR
3000+0.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J355R,LF SSM3J355R,LF Hersteller : Toshiba Semiconductor and Storage SSM3J355R_datasheet_en_20161130.pdf?did=55743&prodName=SSM3J355R Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 10 V
auf Bestellung 28735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J355R,LF Hersteller : Toshiba SSM3J355R_datasheet_en_20161130.pdf?did=55743&prodName=SSM3J355R P-канальний ПТ; Udss, В = 20; Id = 6 А; Ciss, пФ @ Uds, В = 1030 @ 10; Rds = 30,1 мОм @ 4 A, 4,5 В; Ugs(th) = 1 В @ 1 мА; Р, Вт = 1; Тексп, °C = до 150; Тип монт. = smd; SOT-23F-3
auf Bestellung 2699 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J355R,LF SSM3J355R,LF Hersteller : Toshiba 5691docget.jspdid55743prodnamessm3j355r.jspdid55743prodnamessm3j355r..pdf Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH