Technische Details SSM3J356R,LXGF(T Toshiba
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; 60V; 2A; 2W; SOT23F, Type of transistor: P-MOSFET, Drain-source voltage: 60V, Drain current: 2A, Power dissipation: 2W, Case: SOT23F, Gate-source voltage: 10V, Kind of channel: enhancement.
Weitere Produktangebote SSM3J356R,LXGF(T nach Preis ab 0.12 EUR bis 0.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
| SSM3J356R,LXGF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; 60V; 2A; 2W; SOT23F Type of transistor: P-MOSFET Drain-source voltage: 60V Drain current: 2A Power dissipation: 2W Case: SOT23F Gate-source voltage: 10V Kind of channel: enhancement |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SSM3J356R,LXGF(T |
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 60V; 2A; 2W; SOT23F
Type of transistor: P-MOSFET
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: 10V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 60V; 2A; 2W; SOT23F
Type of transistor: P-MOSFET
Drain-source voltage: 60V
Drain current: 2A
Power dissipation: 2W
Case: SOT23F
Gate-source voltage: 10V
Kind of channel: enhancement
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.12 EUR |