SSM3J35AMFV,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 20V 250MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.06 EUR |
| 16000+ | 0.05 EUR |
Produktrezensionen
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Technische Details SSM3J35AMFV,L3F Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 250MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: VESM, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V.
Weitere Produktangebote SSM3J35AMFV,L3F nach Preis ab 0.03 EUR bis 0.38 EUR
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SSM3J35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 0.25A 3-Pin VESM T/R |
auf Bestellung 31583 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 0.25A 3-Pin VESM T/R |
auf Bestellung 31583 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J35AMFV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 250MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V |
auf Bestellung 27322 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J35AMFV,L3F | Hersteller : Toshiba |
MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V |
auf Bestellung 59249 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 0.25A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |
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SSM3J35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 0.25A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |
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 |
SSM3J35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET P-CH Si 20V 0.25A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |