SSM3J35AMFV,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 250MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.068 EUR |
| 16000+ | 0.062 EUR |
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Technische Details SSM3J35AMFV,L3F Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 250MA VESM, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Supplier Device Package: VESM, Vgs(th) (Max) @ Id: 1V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3J35AMFV,L3F nach Preis ab 0.057 EUR bis 0.45 EUR
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SSM3J35AMFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 250MA VESM Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
auf Bestellung 27322 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J35AMFV,L3F | Toshiba |
MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V |
auf Bestellung 59249 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3J35AMFV,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 250MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 250MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 27322 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 0.39 EUR |
| 87+ | 0.24 EUR |
| 140+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| 2000+ | 0.086 EUR |
| SSM3J35AMFV,L3F |
|
Hersteller: Toshiba
MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V
auf Bestellung 59249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.45 EUR |
| 11+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 1000+ | 0.09 EUR |
| 2500+ | 0.077 EUR |
| 8000+ | 0.058 EUR |
| 24000+ | 0.057 EUR |