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SSM3J36FS,LF

SSM3J36FS,LF Toshiba Semiconductor and Storage

docget.jsp?did=11656&prodName=SSM3J36FS Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 429000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.05 EUR
15000+0.05 EUR
21000+0.05 EUR
30000+0.05 EUR
75000+0.04 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J36FS,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 330MA SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Ta), Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SSM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V.

Weitere Produktangebote SSM3J36FS,LF nach Preis ab 0.05 EUR bis 0.29 EUR

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SSM3J36FS,LF SSM3J36FS,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=11656&prodName=SSM3J36FS Description: MOSFET P-CH 20V 330MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 431571 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
103+0.17 EUR
222+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J36FS,LF SSM3J36FS,LF Hersteller : Toshiba SSM3J36FS_datasheet_en_20140301-1916217.pdf MOSFETs Small Signal MOSFET
auf Bestellung 293947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.29 EUR
16+0.18 EUR
100+0.08 EUR
500+0.08 EUR
1000+0.07 EUR
3000+0.05 EUR
24000+0.05 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J36FS,LF Hersteller : Toshiba docget.jsp?did=11656&prodName=SSM3J36FS P-Channel 20V 330mA (Ta) 150mW (Ta) Surface Mount SSM SSM3J36FS,LF TSSM3j36fs
Anzahl je Verpackung: 100 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
200+0.24 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J36FS,LF Hersteller : Toshiba 286docget.jsptypedatasheetlangenpidssm3j36fs.jsptypedatasheetlangenp.pdf Trans MOSFET P-CH Si 20V 0.33A 3-Pin SSM T/R
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