auf Bestellung 10355 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.19 EUR |
| 24000+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3J374R,LXHF Toshiba
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: SOT-23F, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): +10V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote SSM3J374R,LXHF nach Preis ab 0.15 EUR bis 0.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SSM3J374R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
 Description: SMOS P-CH VDSS:-30V VGSS:-20/+10Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
| SSM3J374R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10 Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 8344 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
| SSM3J374R,LXHF | Hersteller : Toshiba |
Trans MOSFET P-CH Si 30V 4A Automotive AEC-Q101 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |