SSM3J375F,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 1V @ 1mA
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
| 9000+ | 0.094 EUR |
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Technische Details SSM3J375F,LF Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI, Power Dissipation (Max): 600mW (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: S-Mini, Vgs(th) (Max) @ Id: 1V @ 1mA, Vgs (Max): +6V, -8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V.
Weitere Produktangebote SSM3J375F,LF nach Preis ab 0.076 EUR bis 0.63 EUR
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SSM3J375F,LF | Hersteller : Toshiba |
MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-2A |
auf Bestellung 6245 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J375F,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 2A S-MINI Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +6V, -8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: S-Mini Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 25440 Stücke: Lieferzeit 10-14 Tag (e) |
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