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SSM3J377R,LF

SSM3J377R,LF Toshiba Semiconductor and Storage

docget.jsp?did=59203&prodName=SSM3J377R Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.9A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.1 EUR
9000+0.09 EUR
15000+0.089 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3J377R,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 3.9A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): +6V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V.

Weitere Produktangebote SSM3J377R,LF nach Preis ab 0.077 EUR bis 0.51 EUR

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SSM3J377R,LF SSM3J377R,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=59203&prodName=SSM3J377R Description: MOSFET P-CH 20V 3.9A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 20069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
55+0.32 EUR
103+0.17 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J377R,LF SSM3J377R,LF Hersteller : Toshiba SSM3J377R_datasheet_en_20220629-1528161.pdf MOSFETs Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-3.9A
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.51 EUR
10+0.32 EUR
100+0.14 EUR
1000+0.12 EUR
3000+0.1 EUR
9000+0.086 EUR
24000+0.077 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SSM3J377R,LF
Produktcode: 192928
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docget.jsp?did=59203&prodName=SSM3J377R Transistoren > Transistoren P-Kanal-Feld
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SSM3J377R,LF SSM3J377R,LF Hersteller : Toshiba ssm3j377r_datasheet_en_20220629.pdf Trans MOSFET P-CH Si 20V 3.9A 3-Pin SOT-23F T/R
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