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Technische Details SSM3K15AFS Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 0.1A, Power dissipation: 0.1W, Case: SC75, Gate-source voltage: ±20V, On-state resistance: 6Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.
Weitere Produktangebote SSM3K15AFS
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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SSM3K15AFS,LF(T | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.1A Power dissipation: 0.1W Case: SC75 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SSM3K15AFS,LF(T |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.1W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.1A; 100mW; SC75; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.1A
Power dissipation: 0.1W
Case: SC75
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH