SSM3K15AFU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.079 EUR |
| 6000+ | 0.07 EUR |
| 9000+ | 0.065 EUR |
| 15000+ | 0.061 EUR |
| 21000+ | 0.058 EUR |
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Technische Details SSM3K15AFU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM, Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Part Status: Active, Supplier Device Package: USM, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3K15AFU,LF nach Preis ab 0.063 EUR bis 0.39 EUR
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SSM3K15AFU,LF | Toshiba |
MOSFETs Small-Signal MOSFET |
auf Bestellung 15078 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K15AFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA USM Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Part Status: Active Supplier Device Package: USM Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 28972 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM3K15AFU,LF |
|
Hersteller: Toshiba
MOSFETs Small-Signal MOSFET
MOSFETs Small-Signal MOSFET
auf Bestellung 15078 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.36 EUR |
| 16+ | 0.23 EUR |
| 100+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.088 EUR |
| 3000+ | 0.071 EUR |
| 6000+ | 0.063 EUR |
| SSM3K15AFU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 28972 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 0.39 EUR |
| 88+ | 0.24 EUR |
| 143+ | 0.14 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.095 EUR |