auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.052 EUR |
| 16000+ | 0.048 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K15AMFV,L3F Toshiba
Description: MOSFET N-CH 30V 100MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: VESM, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V.
Weitere Produktangebote SSM3K15AMFV,L3F nach Preis ab 0.04 EUR bis 0.35 EUR
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SSM3K15AMFV,L3F | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 30V 0.1A 3-Pin VESM T/R |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K15AMFV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
auf Bestellung 99900 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K15AMFV,L3F | Hersteller : Toshiba |
MOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS |
auf Bestellung 113657 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K15AMFV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
auf Bestellung 101873 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K15AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 0.1A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |
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SSM3K15AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 0.1A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |