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Technische Details SSM3K16CT,L3F Toshiba
Description: MOSFET N-CH 20V 100MA CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: CST3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V.
Weitere Produktangebote SSM3K16CT,L3F nach Preis ab 0.09 EUR bis 0.6 EUR
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SSM3K16CT,L3F | Toshiba |
 Trans MOSFET N-CH Si 20V 0.1A 3-Pin CST T/R |
auf Bestellung 1690 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K16CT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
auf Bestellung 6059 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K16CT,L3F | Toshiba |
MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V |
auf Bestellung 3732 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K16CT,L3F |
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Hersteller: Toshiba
Trans MOSFET N-CH Si 20V 0.1A 3-Pin CST T/R
Trans MOSFET N-CH Si 20V 0.1A 3-Pin CST T/R
auf Bestellung 1690 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 523+ | 0.33 EUR |
| 847+ | 0.2 EUR |
| 855+ | 0.19 EUR |
| 1227+ | 0.13 EUR |
| 1229+ | 0.12 EUR |
| 1563+ | 0.093 EUR |
| SSM3K16CT,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 6059 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 72+ | 0.29 EUR |
| 116+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.1 EUR |
| 5000+ | 0.09 EUR |
| SSM3K16CT,L3F |
|
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V
MOSFETs LowON Res MOSFET ID=0.1A VDSS=20V
auf Bestellung 3732 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.6 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.13 EUR |
| 5000+ | 0.11 EUR |