| Anzahl | Preis |
|---|---|
| 10+ | 0.3 EUR |
| 16+ | 0.18 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.081 EUR |
| 5000+ | 0.076 EUR |
| 10000+ | 0.056 EUR |
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Technische Details SSM3K16CT,L3F Toshiba
Description: MOSFET N-CH 20V 100MA CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: CST3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V.
Weitere Produktangebote SSM3K16CT,L3F nach Preis ab 0.076 EUR bis 0.4 EUR
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SSM3K16CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 20V 100MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
auf Bestellung 6059 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K16CT,L3F | Hersteller : Toshiba |
MOSFET LowON Res MOSFET ID=0.1A VDSS=20V SOT-883-3 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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SSM3K16CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
Produkt ist nicht verfügbar |