SSM3K16FU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
| 9000+ | 0.09 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K16FU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: USM, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V.
Weitere Produktangebote SSM3K16FU,LF nach Preis ab 0.08 EUR bis 0.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SSM3K16FU,LF | Toshiba |
MOSFETs Small-signal MOSFET High Speed Switching |
auf Bestellung 29305 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K16FU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 100MA USMPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 100µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V |
auf Bestellung 53176 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K16FU,LF | Toshiba |
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R |
auf Bestellung 187 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SSM3K16FU,LF |
![]() |
Hersteller: Toshiba
MOSFETs Small-signal MOSFET High Speed Switching
MOSFETs Small-signal MOSFET High Speed Switching
auf Bestellung 29305 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.5 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 3000+ | 0.1 EUR |
| 9000+ | 0.083 EUR |
| 24000+ | 0.08 EUR |
| SSM3K16FU,LF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 53176 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 0.52 EUR |
| 66+ | 0.32 EUR |
| 92+ | 0.23 EUR |
| 105+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| SSM3K16FU,LF |
![]() |
Hersteller: Toshiba
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R
Trans MOSFET N-CH Si 20V 0.1A 3-Pin USM T/R
auf Bestellung 187 Stücke:
Lieferzeit 14-21 Tag (e)



