SSM3K324R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| 15000+ | 0.11 EUR |
| 21000+ | 0.11 EUR |
| 30000+ | 0.1 EUR |
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Technische Details SSM3K324R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT-23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V.
Weitere Produktangebote SSM3K324R,LF nach Preis ab 0.11 EUR bis 0.7 EUR
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SSM3K324R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 4A SOT-23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V |
auf Bestellung 61781 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K324R,LF | Toshiba |
MOSFETs N-Ch U-MOSVI FET ID 4A 30VDSS 200pF |
auf Bestellung 8618 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K324R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Description: MOSFET N-CH 30V 4A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
auf Bestellung 61781 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 0.67 EUR |
| 52+ | 0.4 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| SSM3K324R,LF |
|
Hersteller: Toshiba
MOSFETs N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
MOSFETs N-Ch U-MOSVI FET ID 4A 30VDSS 200pF
auf Bestellung 8618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| 24000+ | 0.11 EUR |