Technische Details SSM3K329R,LF(B Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Power dissipation: 1W, Case: SOT23F, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: 30V, Drain current: 3.5A, On-state resistance: 289mΩ, Version: ESD, Gate charge: 1.5nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote SSM3K329R,LF(B
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SSM3K329R,LF(B | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 30V 3.5A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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SSM3K329R,LF(B | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F; ESD Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1W Case: SOT23F Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 289mΩ Version: ESD Gate charge: 1.5nC Kind of channel: enhancement Gate-source voltage: ±12V Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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SSM3K329R,LF(B | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F; ESD Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1W Case: SOT23F Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 289mΩ Version: ESD Gate charge: 1.5nC Kind of channel: enhancement Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |