SSM3K329R Toshiba

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; 1W; SOT23F; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 3.5A, Power dissipation: 1W, Case: SOT23F, Gate-source voltage: ±12V, On-state resistance: 289mΩ, Mounting: SMD, Gate charge: 1.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.