SSM3K335R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N CH 30V 6A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.16 EUR |
| 75000+ | 0.15 EUR |
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Technische Details SSM3K335R,LF Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A SOT-23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.
Weitere Produktangebote SSM3K335R,LF nach Preis ab 0.087 EUR bis 1.06 EUR
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SSM3K335R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R |
auf Bestellung 18900 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K335R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R |
auf Bestellung 18900 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K335R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 30V 6A SOT-23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V |
auf Bestellung 87170 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K335R,LF | Hersteller : Toshiba |
MOSFET N-Ch U-MOSVI FET ID 6A 30VDSS 340pF |
auf Bestellung 77465 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM3K335R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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SSM3K335R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 30V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |