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SSM3K335R,LF

SSM3K335R,LF Toshiba Semiconductor and Storage

docget.jsp?did=13020&prodName=SSM3K335R
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 6A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3K335R,LF Toshiba Semiconductor and Storage

Description: MOSFET N CH 30V 6A SOT-23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.

Weitere Produktangebote SSM3K335R,LF nach Preis ab 0.14 EUR bis 0.76 EUR

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SSM3K335R,LF SSM3K335R,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13020&prodName=SSM3K335R Description: MOSFET N CH 30V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 7184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
41+0.43 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K335R,LF SSM3K335R,LF Hersteller : Toshiba E7D6B058705B1B7AD30705064135CB2936229D193CC9C99CBE6A02FD5D63D151.pdf MOSFETs N-Ch U-MOSVI FET ID 6A 30VDSS 340pF
auf Bestellung 13750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.76 EUR
10+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.2 EUR
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K335R,LF Hersteller : Toshiba SSM3K335R.pdf N-канальний ПТ, Udss, В = 30, Id = 6 А, Ciss, пФ @ Uds, В = 340 @ 15, Qg, нКл = 2,7 @ 4,5 В, Rds = 38 мОм @ 4 A, 10 В, Ugs(th) = 2,5 В @ 100 мкА, Р, Вт = 1, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOT-23F-3 Од. вим: ш
Anzahl je Verpackung: 3000 Stücke
verfügbar 287 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH