SSM3K337R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
| 9000+ | 0.32 EUR |
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Technische Details SSM3K337R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.7V @ 1mA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 38 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V.
Weitere Produktangebote SSM3K337R,LF nach Preis ab 0.32 EUR bis 1.07 EUR
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SSM3K337R,LF | Hersteller : Toshiba |
MOSFET N-Channel Mosfet |
auf Bestellung 38449 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM3K337R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.7V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 38 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
auf Bestellung 15195 Stücke: Lieferzeit 21-28 Tag (e) |
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