auf Bestellung 12905 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.4 EUR |
43+ | 1.21 EUR |
100+ | 0.84 EUR |
500+ | 0.7 EUR |
1000+ | 0.6 EUR |
3000+ | 0.53 EUR |
6000+ | 0.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K341R,LXHF Toshiba
Description: AECQ MOSFET NCH 60V 6A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SSM3K341R,LXHF nach Preis ab 0.36 EUR bis 0.95 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SSM3K341R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K341R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 31067 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K341R,LXHF | Hersteller : Toshiba | Trans MOSFET N-CH Si 60V 6A Automotive AEC-Q101 3-Pin SOT-23F |
Produkt ist nicht verfügbar |
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SSM3K341R,LXHF | Hersteller : Toshiba | Trans MOSFET N-CH Si 60V 6A Automotive AEC-Q101 3-Pin SOT-23F |
Produkt ist nicht verfügbar |