auf Bestellung 7443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.3 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.41 EUR |
| 3000+ | 0.34 EUR |
| 6000+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K341R,LXHF Toshiba
Description: AECQ MOSFET NCH 60V 6A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SSM3K341R,LXHF nach Preis ab 0.29 EUR bis 1.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SSM3K341R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT23FPackaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K341R,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16669 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K341R,LXHF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 6A 3-Pin SOT-23F Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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SSM3K341R,LXHF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 6A 3-Pin SOT-23F Automotive AEC-Q101 |
Produkt ist nicht verfügbar |

