SSM3K341TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A UFM
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 15000+ | 0.19 EUR |
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Technische Details SSM3K341TU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A UFM, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3K341TU,LF nach Preis ab 0.2 EUR bis 1.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM3K341TU,LF | Hersteller : Toshiba |
MOSFETs LowON Res MOSFET ID=6A VDSS=60V |
auf Bestellung 3067 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K341TU,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 6A UFMVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 17164 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K341TU,LF | Hersteller : Toshiba |
MOSFET N-CH 60V 6A UFM Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
