| Anzahl | Privatkunde |
|---|---|
| 508+ | 0.35 EUR |
| 591+ | 0.29 EUR |
| 678+ | 0.24 EUR |
| 1000+ | 0.2 EUR |
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Technische Details SSM3K341TU,LF Toshiba
Description: MOSFET N-CH 60V 6A UFM, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3K341TU,LF nach Preis ab 0.17 EUR bis 1.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SSM3K341TU,LF | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 6A UFMInput Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Tape & Reel (TR) |
auf Bestellung 78000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K341TU,LF | Toshiba |
Trans MOSFET N-CH Si 60V 6A 3-Pin UFM T/R |
auf Bestellung 2117 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K341TU,LF | Toshiba |
MOSFETs LowON Res MOSFET ID=6A VDSS=60V |
auf Bestellung 3067 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K341TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 6A UFM Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V |
auf Bestellung 80931 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K341TU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A UFM
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 6A UFM
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.36 EUR |
| 9000+ | 0.31 EUR |
| SSM3K341TU,LF |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 60V 6A 3-Pin UFM T/R
Trans MOSFET N-CH Si 60V 6A 3-Pin UFM T/R
auf Bestellung 2117 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 470+ | 0.37 EUR |
| 506+ | 0.33 EUR |
| 508+ | 0.32 EUR |
| 591+ | 0.26 EUR |
| 594+ | 0.25 EUR |
| 678+ | 0.21 EUR |
| 1000+ | 0.17 EUR |
| SSM3K341TU,LF |
|
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=6A VDSS=60V
MOSFETs LowON Res MOSFET ID=6A VDSS=60V
auf Bestellung 3067 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.09 EUR |
| 10+ | 0.71 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.24 EUR |
| SSM3K341TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A UFM
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 6A UFM
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 80931 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 23+ | 0.94 EUR |
| 50+ | 0.69 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |