SSM3K341TU,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT323F
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K341TU,LXHF Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT323F, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: UFM, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SSM3K341TU,LXHF nach Preis ab 0.31 EUR bis 1.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM3K341TU,LXHF | Toshiba |
MOSFETs N Channel 60V 6A AECQ MOSFET |
auf Bestellung 12286 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
SSM3K341TU,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 60V 6A SOT323FPackaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: UFM Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9699 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| SSM3K341TU,LXHF | Toshiba |
Trans MOSFET N-CH Si 60V 6A Automotive UFM |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SSM3K341TU,LXHF |
![]() |
Hersteller: Toshiba
MOSFETs N Channel 60V 6A AECQ MOSFET
MOSFETs N Channel 60V 6A AECQ MOSFET
auf Bestellung 12286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.26 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.64 EUR |
| 250+ | 0.63 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.38 EUR |
| SSM3K341TU,LXHF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 60V 6A SOT323F
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET NCH 60V 6A SOT323F
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9699 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 18+ | 1.17 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |
| SSM3K341TU,LXHF |
![]() |
Hersteller: Toshiba
Trans MOSFET N-CH Si 60V 6A Automotive UFM
Trans MOSFET N-CH Si 60V 6A Automotive UFM
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 215+ | 0.82 EUR |
| 253+ | 0.68 EUR |
| 254+ | 0.64 EUR |
| 256+ | 0.62 EUR |
| 349+ | 0.43 EUR |
| 352+ | 0.42 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.31 EUR |


