SSM3K345R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CHANNEL 20V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.14 EUR |
| 9000+ | 0.13 EUR |
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Technische Details SSM3K345R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 20V 4A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V.
Weitere Produktangebote SSM3K345R,LF nach Preis ab 0.12 EUR bis 0.67 EUR
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SSM3K345R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 4A 3-Pin SOT-23F T/R |
auf Bestellung 1371 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K345R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 4A 3-Pin SOT-23F T/R |
auf Bestellung 1371 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K345R,LF | Hersteller : Toshiba |
MOSFET LowON Res MOSFET ID=4A VDSS=20V |
auf Bestellung 52090 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K345R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 20V 4A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V |
auf Bestellung 13824 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K345R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 4A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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SSM3K345R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 4A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |