SSM3K347R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Drain to Source Voltage (Vdss): 38 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
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Technische Details SSM3K347R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F, Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V, Drain to Source Voltage (Vdss): 38 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: SOT-23F, Vgs(th) (Max) @ Id: 2.4V @ 1mA, Power Dissipation (Max): 2W (Ta), Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-23-3 Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3K347R,LF nach Preis ab 0.12 EUR bis 0.72 EUR
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SSM3K347R,LF | Hersteller : Toshiba |
MOSFETs LowON Res MOSFET ID=2A VDSS=38V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K347R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 38V 2A SOT23FInput Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Drain to Source Voltage (Vdss): 38 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 2.4V @ 1mA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 12430 Stücke: Lieferzeit 10-14 Tag (e) |
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