SSM3K357R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 650MA SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 12 V
auf Bestellung 54000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
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Technische Details SSM3K357R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 650MA SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 12 V.
Weitere Produktangebote SSM3K357R,LF nach Preis ab 0.1 EUR bis 0.92 EUR
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SSM3K357R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 0.65A Automotive AEC-Q101 3-Pin SOT-23F T/R |
auf Bestellung 1728 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K357R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 0.65A Automotive AEC-Q101 3-Pin SOT-23F T/R |
auf Bestellung 1728 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K357R,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 650MA SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 12 V |
auf Bestellung 54979 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3K357R,LF | Hersteller : Toshiba |
MOSFET LowON Res MOSFET ID=.65A VDSS=60V |
auf Bestellung 25080 Stücke: Lieferzeit 14-28 Tag (e) |
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| SSM3K357R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 0.65A Automotive 3-Pin SOT-23F SSM3K357R,LF TSSM3K357R Anzahl je Verpackung: 100 Stücke |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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SSM3K357R,LF Produktcode: 197600 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SSM3K357R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 0.65A Automotive AEC-Q101 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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SSM3K357R,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 0.65A Automotive 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |