SSM3K35AMFV,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 20V 250MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.03 EUR |
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Technische Details SSM3K35AMFV,L3F Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: VESM, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V.
Weitere Produktangebote SSM3K35AMFV,L3F nach Preis ab 0.03 EUR bis 0.31 EUR
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SSM3K35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R |
auf Bestellung 17741 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K35AMFV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: VESM Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
auf Bestellung 150213 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K35AMFV,L3F | Hersteller : Toshiba |
MOSFETs LowON Res MOSFET ID=.25A VDSS=20V |
auf Bestellung 788537 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R |
auf Bestellung 17741 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |
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 |
SSM3K35AMFV,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |