SSM3K361R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.33 EUR |
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Technische Details SSM3K361R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A SOT-23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 100µA, Supplier Device Package: SOT-23F, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V.
Weitere Produktangebote SSM3K361R,LF nach Preis ab 0.27 EUR bis 1.59 EUR
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SSM3K361R,LF | Toshiba |
MOSFETs U-MOSVIII-H 100V 3.5A 3.2nC MOSFET |
auf Bestellung 96231 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K361R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A SOT-23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
auf Bestellung 10101 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K361R,LF | Toshiba |
Trans MOSFET N-CH Si 100V 3.5A Automotive AEC-Q101 3-Pin SOT-23F T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SSM3K361R,LF |
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Hersteller: Toshiba
MOSFETs U-MOSVIII-H 100V 3.5A 3.2nC MOSFET
MOSFETs U-MOSVIII-H 100V 3.5A 3.2nC MOSFET
auf Bestellung 96231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.62 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.36 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.27 EUR |
| SSM3K361R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 10101 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 22+ | 1 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| SSM3K361R,LF |
![]() |
Hersteller: Toshiba
Trans MOSFET N-CH Si 100V 3.5A Automotive AEC-Q101 3-Pin SOT-23F T/R
Trans MOSFET N-CH Si 100V 3.5A Automotive AEC-Q101 3-Pin SOT-23F T/R
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)


