SSM3K361TU,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 100V 3.5A SOT323
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.38 EUR |
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Technische Details SSM3K361TU,LXHF Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 100V 3.5A SOT323, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 2.5V @ 100µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote SSM3K361TU,LXHF nach Preis ab 0.34 EUR bis 1.57 EUR
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SSM3K361TU,LXHF | Hersteller : Toshiba |
MOSFETs N Channel 100V 3.5A AECQ MOSFET |
auf Bestellung 5774 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K361TU,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: AECQ MOSFET NCH 100V 3.5A SOT323 Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Qualification: AEC-Q101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 6773 Stücke: Lieferzeit 10-14 Tag (e) |
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