SSM3K36TU,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details SSM3K36TU,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM, Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V, Supplier Device Package: UFM, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3K36TU,LF nach Preis ab 0.086 EUR bis 0.56 EUR
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SSM3K36TU,LF | Toshiba |
MOSFETs Sm-signal/Hi-Speed UFM (SOT-323F) |
auf Bestellung 3901 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K36TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 500MA UFM Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V Supplier Device Package: UFM Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 5008 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SSM3K36TU,LF |
|
Hersteller: Toshiba
MOSFETs Sm-signal/Hi-Speed UFM (SOT-323F)
MOSFETs Sm-signal/Hi-Speed UFM (SOT-323F)
auf Bestellung 3901 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.48 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.1 EUR |
| 6000+ | 0.086 EUR |
| SSM3K36TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 500MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5008 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 46+ | 0.39 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.12 EUR |