SSM3K376R,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 9000+ | 0.13 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K376R,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT23F, Packaging: Tape & Reel (TR), Package / Case: SOT-23-3 Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SOT-23F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): +12V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V.
Weitere Produktangebote SSM3K376R,LF nach Preis ab 0.12 EUR bis 0.77 EUR
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SSM3K376R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 4A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): +12V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
auf Bestellung 69138 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K376R,LF | Toshiba |
MOSFETs LowON Res MOSFET ID=4A VDSS=30V |
auf Bestellung 243091 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K376R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
auf Bestellung 69138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 46+ | 0.45 EUR |
| 64+ | 0.33 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| SSM3K376R,LF |
|
Hersteller: Toshiba
MOSFETs LowON Res MOSFET ID=4A VDSS=30V
MOSFETs LowON Res MOSFET ID=4A VDSS=30V
auf Bestellung 243091 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 3000+ | 0.17 EUR |
| 9000+ | 0.14 EUR |
| 24000+ | 0.12 EUR |