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SSM3K37CT,L3F

SSM3K37CT,L3F Toshiba

SSM3K37CT_datasheet_en_20140301-1916522.pdf
Hersteller: Toshiba
MOSFET Small-Signal MOSFET
auf Bestellung 8717 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+0.46 EUR
10+0.31 EUR
100+0.13 EUR
1000+0.077 EUR
2500+0.07 EUR
10000+0.063 EUR
20000+0.062 EUR
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Technische Details SSM3K37CT,L3F Toshiba

Description: MOSFET N-CH 20V 200MA CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: CST3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V.

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SSM3K37CT,L3F SSM3K37CT,L3F Toshiba Semiconductor and Storage SSM3K37CT_datasheet_en_20140301.pdf?did=6169&prodName=SSM3K37CT Description: MOSFET N-CH 20V 200MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 11704 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
56+0.32 EUR
114+0.16 EUR
500+0.13 EUR
1000+0.09 EUR
2000+0.078 EUR
5000+0.072 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K37CT,L3F SSM3K37CT,L3F Toshiba Semiconductor and Storage SSM3K37CT_datasheet_en_20140301.pdf?did=6169&prodName=SSM3K37CT Description: MOSFET N-CH 20V 200MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 8600 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 8600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K37CT,L3F SSM3K37CT_datasheet_en_20140301.pdf?did=6169&prodName=SSM3K37CT
SSM3K37CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 200MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 11704 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
38+0.48 EUR
56+0.32 EUR
114+0.16 EUR
500+0.13 EUR
1000+0.09 EUR
2000+0.078 EUR
5000+0.072 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K37CT,L3F SSM3K37CT_datasheet_en_20140301.pdf?did=6169&prodName=SSM3K37CT
SSM3K37CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 200MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 8600 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 8600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH