auf Bestellung 8717 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.46 EUR |
| 10+ | 0.31 EUR |
| 100+ | 0.13 EUR |
| 1000+ | 0.077 EUR |
| 2500+ | 0.07 EUR |
| 10000+ | 0.063 EUR |
| 20000+ | 0.062 EUR |
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Produktbewertung abgeben
Technische Details SSM3K37CT,L3F Toshiba
Description: MOSFET N-CH 20V 200MA CST3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: CST3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V.
Weitere Produktangebote SSM3K37CT,L3F nach Preis ab 0.072 EUR bis 0.48 EUR
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SSM3K37CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 20V 200MA CST3Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V |
auf Bestellung 11704 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 200MA CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V |
auf Bestellung 8600 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37CT,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.2A 3-Pin CST T/R |
Produkt ist nicht verfügbar |