Technische Details SSM3K37FS,LF Toshiba
Description: MOSFET N-CH 20V 200MA SSM, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: 150°C (TA), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SSM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V.
Weitere Produktangebote SSM3K37FS,LF nach Preis ab 0.044 EUR bis 0.33 EUR
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SSM3K37FS,LF | Hersteller : Toshiba |
 MOSFETs Small Low ON Resistane MOSFETs |
auf Bestellung 45783 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37FS,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 200MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V |
auf Bestellung 7029 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37FS,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.2A 3-Pin SSM T/R |
auf Bestellung 516 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K37FS,LF | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.2A 3-Pin SSM T/R |
Produkt ist nicht verfügbar |
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SSM3K37FS,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 200MA SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V |
Produkt ist nicht verfügbar |