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SSM3K37MFV,L3F

SSM3K37MFV,L3F Toshiba Semiconductor and Storage

SSM3K37MFV_datasheet_en_20140301.pdf?did=1892&prodName=SSM3K37MFV
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.079 EUR
16000+0.071 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3K37MFV,L3F Toshiba Semiconductor and Storage

Description: MOSFET N-CH 20V 250MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: VESM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V.

Weitere Produktangebote SSM3K37MFV,L3F nach Preis ab 0.055 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM3K37MFV,L3F SSM3K37MFV,L3F TOSHIBA SSM3K37MFV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.25A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 5.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 13096 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
463+0.18 EUR
792+0.11 EUR
1109+0.076 EUR
1263+0.068 EUR
2000+0.06 EUR
5000+0.057 EUR
Mindestbestellmenge: 278 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K37MFV,L3F SSM3K37MFV,L3F Toshiba 712BC3D1AD0FD072294CFF05E1357BC1099AEBE5A662854DFA3381893DE6582C.pdf MOSFETs Small-signal FET 0.25A 20V 12pF
auf Bestellung 18737 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.42 EUR
14+0.25 EUR
100+0.17 EUR
500+0.12 EUR
1000+0.092 EUR
2500+0.088 EUR
5000+0.055 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K37MFV,L3F SSM3K37MFV,L3F Toshiba Semiconductor and Storage SSM3K37MFV_datasheet_en_20140301.pdf?did=1892&prodName=SSM3K37MFV Description: MOSFET N-CH 20V 250MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 20147 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
76+0.27 EUR
122+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.099 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K37MFV,L3F SSM3K37MFV.pdf
SSM3K37MFV,L3F
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.25A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 5.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 13096 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
463+0.18 EUR
792+0.11 EUR
1109+0.076 EUR
1263+0.068 EUR
2000+0.06 EUR
5000+0.057 EUR
Mindestbestellmenge: 278 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K37MFV,L3F 712BC3D1AD0FD072294CFF05E1357BC1099AEBE5A662854DFA3381893DE6582C.pdf
SSM3K37MFV,L3F
Hersteller: Toshiba
MOSFETs Small-signal FET 0.25A 20V 12pF
auf Bestellung 18737 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+0.42 EUR
14+0.25 EUR
100+0.17 EUR
500+0.12 EUR
1000+0.092 EUR
2500+0.088 EUR
5000+0.055 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K37MFV,L3F SSM3K37MFV_datasheet_en_20140301.pdf?did=1892&prodName=SSM3K37MFV
SSM3K37MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 20147 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
76+0.27 EUR
122+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.099 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH