auf Bestellung 28830 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3534+ | 0.041 EUR |
| 15000+ | 0.039 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM3K37MFV,L3F Toshiba
Description: MOSFET N-CH 20V 250MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: VESM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V.
Weitere Produktangebote SSM3K37MFV,L3F nach Preis ab 0.041 EUR bis 0.39 EUR
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SSM3K37MFV,L3F | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R |
auf Bestellung 28890 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K37MFV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37MFV,L3F | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.25A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±10V On-state resistance: 5.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 13805 Stücke: Lieferzeit 7-14 Tag (e) |
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SSM3K37MFV,L3F | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.25A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±10V On-state resistance: 5.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 13805 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K37MFV,L3F | Hersteller : Toshiba |
MOSFETs Small-signal FET 0.25A 20V 12pF |
auf Bestellung 19966 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37MFV,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V |
auf Bestellung 20147 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37MFV,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |
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| SSM3K37MFV,L3F | Hersteller : Toshiba |
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R |
Produkt ist nicht verfügbar |