| Anzahl | Privatkunde |
|---|---|
| 3534+ | 0.05 EUR |
| 15000+ | 0.048 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3534 Stücke
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Technische Details SSM3K37MFV,L3F Toshiba
Description: MOSFET N-CH 20V 250MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: VESM, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V.
Weitere Produktangebote SSM3K37MFV,L3F nach Preis ab 0.05 EUR bis 0.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SSM3K37MFV,L3F | Toshiba |
 Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R |
auf Bestellung 28890 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K37MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VESM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V |
auf Bestellung 14983 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37MFV,L3F | Toshiba |
MOSFETs Small-signal FET 0.25A 20V 12pF |
auf Bestellung 4501 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K37MFV,L3F | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.25A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±10V On-state resistance: 5.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 13076 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SSM3K37MFV,L3F |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
Trans MOSFET N-CH Si 20V 0.25A 3-Pin VESM T/R
auf Bestellung 28890 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3534+ | 0.05 EUR |
| SSM3K37MFV,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.084 EUR |
| SSM3K37MFV,L3F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
Description: MOSFET N-CH 20V 250MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
auf Bestellung 14983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 72+ | 0.3 EUR |
| 100+ | 0.21 EUR |
| 115+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| SSM3K37MFV,L3F |
|
Hersteller: Toshiba
MOSFETs Small-signal FET 0.25A 20V 12pF
MOSFETs Small-signal FET 0.25A 20V 12pF
auf Bestellung 4501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.49 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 5000+ | 0.083 EUR |
| 8000+ | 0.071 EUR |
| SSM3K37MFV,L3F |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.25A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 5.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.25A; 0.15W; SOT723; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.25A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±10V
On-state resistance: 5.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 13076 Stücke:
Lieferzeit 14-21 Tag (e)