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SSM3K44MFV,L3F

SSM3K44MFV,L3F Toshiba Semiconductor and Storage

SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8000+0.057 EUR
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM3K44MFV,L3F Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 100MA VESM, Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Supplier Device Package: VESM, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM3K44MFV,L3F nach Preis ab 0.072 EUR bis 0.33 EUR

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SSM3K44MFV,L3F SSM3K44MFV,L3F Toshiba Semiconductor and Storage SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 16796 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
87+0.2 EUR
140+0.13 EUR
500+0.092 EUR
1000+0.081 EUR
2000+0.072 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K44MFV,L3F SSM3K44MFV,L3F Toshiba SSM3K44MFV_datasheet_en_20180517-1661033.pdf MOSFET Sm-signal/Hi-Speed VESM (SOT-723)
auf Bestellung 6558 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K44MFV,L3F SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV
SSM3K44MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 16796 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
53+0.33 EUR
87+0.2 EUR
140+0.13 EUR
500+0.092 EUR
1000+0.081 EUR
2000+0.072 EUR
Mindestbestellmenge: 53 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K44MFV,L3F SSM3K44MFV_datasheet_en_20180517-1661033.pdf
SSM3K44MFV,L3F
Hersteller: Toshiba
MOSFET Sm-signal/Hi-Speed VESM (SOT-723)
auf Bestellung 6558 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH