Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > SSM3K44MFV,L3F
SSM3K44MFV,L3F

SSM3K44MFV,L3F Toshiba Semiconductor and Storage

SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.06 EUR
Mindestbestellmenge: 8000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SSM3K44MFV,L3F Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 100MA VESM, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 100µA, Supplier Device Package: VESM, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V.

Weitere Produktangebote SSM3K44MFV,L3F nach Preis ab 0.07 EUR bis 0.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SSM3K44MFV,L3F SSM3K44MFV,L3F Hersteller : Toshiba Semiconductor and Storage SSM3K44MFV_datasheet_en_20180517.pdf?did=363&prodName=SSM3K44MFV Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
auf Bestellung 16796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.20 EUR
140+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K44MFV,L3F SSM3K44MFV,L3F Hersteller : Toshiba SSM3K44MFV_datasheet_en_20180517-1661033.pdf MOSFET Sm-signal/Hi-Speed VESM (SOT-723)
auf Bestellung 6558 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH