SSM3K44MFV,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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Technische Details SSM3K44MFV,L3F Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM, Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Supplier Device Package: VESM, Vgs(th) (Max) @ Id: 1.5V @ 100µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM3K44MFV,L3F nach Preis ab 0.061 EUR bis 0.42 EUR
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SSM3K44MFV,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA VESM Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Supplier Device Package: VESM Vgs(th) (Max) @ Id: 1.5V @ 100µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
auf Bestellung 16796 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K44MFV,L3F | Toshiba |
MOSFETs Sm-signal/Hi-Speed VESM (SOT-723) |
auf Bestellung 14649 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K44MFV,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 16796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 0.39 EUR |
| 87+ | 0.24 EUR |
| 140+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.096 EUR |
| 2000+ | 0.086 EUR |
| SSM3K44MFV,L3F |
|
Hersteller: Toshiba
MOSFETs Sm-signal/Hi-Speed VESM (SOT-723)
MOSFETs Sm-signal/Hi-Speed VESM (SOT-723)
auf Bestellung 14649 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 0.42 EUR |
| 14+ | 0.26 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.092 EUR |
| 5000+ | 0.074 EUR |
| 8000+ | 0.061 EUR |