SSM3K7002CFU,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 170MA USM, Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: USM, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).