SSM3K7002KF,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: SMOS NCH I: 0.4A, V: 60V, P: 270
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 270mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: S-Mini
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.09 EUR |
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Technische Details SSM3K7002KF,LXHF Toshiba Semiconductor and Storage
Description: SMOS NCH I: 0.4A, V: 60V, P: 270, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Power Dissipation (Max): 270mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: S-Mini, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SSM3K7002KF,LXHF nach Preis ab 0.1 EUR bis 0.63 EUR
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SSM3K7002KF,LXHF | Hersteller : Toshiba Semiconductor and Storage |
Description: SMOS NCH I: 0.4A, V: 60V, P: 270 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Power Dissipation (Max): 270mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: S-Mini Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17268 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K7002KF,LXHF | Hersteller : Toshiba |
MOSFET SMOS Nch I: 0.4A, V: 60V, P: 270mW S-Min |
auf Bestellung 32480 Stücke: Lieferzeit 10-14 Tag (e) |
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