SSM3K7002KFU,LXH Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: SMOS LOW RON NCH IO: 0.4A VDSS:
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.11 EUR |
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Technische Details SSM3K7002KFU,LXH Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH IO: 0.4A VDSS:, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: USM, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SSM3K7002KFU,LXH nach Preis ab 0.08 EUR bis 0.53 EUR
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SSM3K7002KFU,LXH | Hersteller : Toshiba |
MOSFETs SMOS Low RON Nch Io: 0.4A Vdss: 60V Vgss |
auf Bestellung 5661 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K7002KFU,LXH | Hersteller : Toshiba Semiconductor and Storage |
Description: SMOS LOW RON NCH IO: 0.4A VDSS: Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: USM Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 3574 Stücke: Lieferzeit 10-14 Tag (e) |
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