SSM3K72CTC,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.1 EUR |
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Technische Details SSM3K72CTC,L3F Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: CST3C, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V.
Weitere Produktangebote SSM3K72CTC,L3F nach Preis ab 0.096 EUR bis 0.78 EUR
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SSM3K72CTC,L3F | Hersteller : Toshiba |
MOSFET Small-signal MOSFET VDSS=60V, ID=0.15A |
auf Bestellung 20060 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM3K72CTC,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 150MA CST3C Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
auf Bestellung 10005 Stücke: Lieferzeit 21-28 Tag (e) |
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