SSM3K72KFS,LXHF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SSM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Technische Details SSM3K72KFS,LXHF Toshiba Semiconductor and Storage
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: SSM, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote SSM3K72KFS,LXHF nach Preis ab 0.12 EUR bis 0.48 EUR
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SSM3K72KFS,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SSM Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
auf Bestellung 6695 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM3K72KFS,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SSM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q LOW RDSON SS MOS N-CH
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SSM
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 6695 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 61+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |