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SSM5H08TU,LF

SSM5H08TU,LF Toshiba

SSM5H08TU_datasheet_en_20140301-1627372.pdf Hersteller: Toshiba
MOSFET Small Signal MOSFET N-ch+SBD VDSS=20V,VR=20V, I(SBD)=0.5A, VGSS=+/-12V, ID=1.5A,RDS(ON)=0.140Ohma.4V
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4+0.72 EUR
10+0.57 EUR
100+0.34 EUR
1000+0.22 EUR
3000+0.19 EUR
9000+0.17 EUR
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Technische Details SSM5H08TU,LF Toshiba

Description: MOSFET N-CH 20V 1.5A UFV, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 100µA, Supplier Device Package: UFV, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V.

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SSM5H08TU,LF SSM5H08TU,LF Hersteller : Toshiba Semiconductor and Storage SSM5H08TU_datasheet_en_20140301.pdf?did=21119&prodName=SSM5H08TU Description: MOSFET N-CH 20V 1.5A UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SSM5H08TU,LF SSM5H08TU,LF Hersteller : Toshiba Semiconductor and Storage SSM5H08TU_datasheet_en_20140301.pdf?did=21119&prodName=SSM5H08TU Description: MOSFET N-CH 20V 1.5A UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UFV
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH