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SSM6J422TU,LF

SSM6J422TU,LF Toshiba Semiconductor and Storage

SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SSM6J422TU,LF Toshiba Semiconductor and Storage

Description: MOSFET P-CH 20V 4A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): +6V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V.

Weitere Produktangebote SSM6J422TU,LF nach Preis ab 0.17 EUR bis 0.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SSM6J422TU,LF SSM6J422TU,LF Toshiba 9480B6B274C0E75939AD0D5E2B8DF1925D488197EDD97A26CDF2EAB7026E499C.pdf MOSFETs Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4.0A, RDS(ON)=0.0427Ohm at 4.5V, in UF6 package
auf Bestellung 3582 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.9 EUR
10+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
3000+0.19 EUR
6000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J422TU,LF SSM6J422TU,LF Toshiba Semiconductor and Storage SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU Description: MOSFET P-CH 20V 4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 3895 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
37+0.57 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J422TU,LF 9480B6B274C0E75939AD0D5E2B8DF1925D488197EDD97A26CDF2EAB7026E499C.pdf
SSM6J422TU,LF
Hersteller: Toshiba
MOSFETs Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-4.0A, RDS(ON)=0.0427Ohm at 4.5V, in UF6 package
auf Bestellung 3582 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+0.9 EUR
10+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
3000+0.19 EUR
6000+0.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J422TU,LF SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU
SSM6J422TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 3895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
37+0.57 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH