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SSM6J424TU,LF

SSM6J424TU,LF Toshiba

SSM6J424TU_datasheet_en_20180327-1627364.pdf
Hersteller: Toshiba
MOSFET Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-6.0A, RDS(ON)=0.0225Ohm a. 4.5V, in UF6 package
auf Bestellung 4345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.57 EUR
100+0.32 EUR
1000+0.22 EUR
3000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 4
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Technische Details SSM6J424TU,LF Toshiba

Description: MOSFET P-CH 20V 6A UF6, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +6V, -8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).

Weitere Produktangebote SSM6J424TU,LF nach Preis ab 0.34 EUR bis 0.83 EUR

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SSM6J424TU,LF SSM6J424TU,LF Hersteller : Toshiba Semiconductor and Storage SSM6J424TU_datasheet_en_20180327.pdf?did=61138&prodName=SSM6J424TU Description: MOSFET P-CH 20V 6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
27+0.67 EUR
100+0.46 EUR
500+0.34 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J424TU,LF Hersteller : Toshiba SSM6J424TU.pdf P-канальний ПТ, Udss, В = 20, Id = 6 А, Ciss, пФ @ Uds, В = 1650 @ 10, Qg, нКл = 23,1 @ 4,5 В, Rds = 22,5 мОм @ 6 A, 4,5 В, Ugs(th) = 1 В @ 1000 мкА, Р, Вт = 1, Тексп, °C = до 150, Тип монт. = smd,... Група товару: Транзистори Корпус: SMD-6 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J424TU,LF SSM6J424TU,LF Hersteller : Toshiba Semiconductor and Storage SSM6J424TU_datasheet_en_20180327.pdf?did=61138&prodName=SSM6J424TU Description: MOSFET P-CH 20V 6A UF6
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH