SSM6J424TU,LF Toshiba
Hersteller: Toshiba
MOSFET Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-6.0A, RDS(ON)=0.0225Ohm a. 4.5V, in UF6 package
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.38 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.23 EUR |
| 9000+ | 0.2 EUR |
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Technische Details SSM6J424TU,LF Toshiba
Description: MOSFET P-CH 20V 6A UF6, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): +6V, -8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6J424TU,LF nach Preis ab 0.4 EUR bis 0.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SSM6J424TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A UF6 Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): +6V, -8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSM6J424TU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Description: MOSFET P-CH 20V 6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 27+ | 0.8 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.4 EUR |