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SSM6K208FE,LF

SSM6K208FE,LF Toshiba Semiconductor and Storage

docget.jsp?did=11044&prodName=SSM6K208FE
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.13 EUR
31+0.69 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.3 EUR
2000+0.27 EUR
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Technische Details SSM6K208FE,LF Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 1.9A ES6, Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Supplier Device Package: ES6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).

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SSM6K208FE,LF SSM6K208FE,LF Toshiba Semiconductor and Storage docget.jsp?did=11044&prodName=SSM6K208FE Description: MOSFET N-CH 30V 1.9A ES6
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K208FE,LF SSM6K208FE,LF Toshiba F2ACD9E3D80CE089A8C8C0EB92A2EAC248DF9C3D942D66416D8D0C4F80DA7DC6.pdf MOSFETs Small Signal MOSFET N-ch VDSS=30V, VGSS=+/-12V, ID=1.9A, RDS(ON)=0.133Ohm a. 4.0V, in ES6 package
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K208FE,LF docget.jsp?did=11044&prodName=SSM6K208FE
SSM6K208FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A ES6
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K208FE,LF F2ACD9E3D80CE089A8C8C0EB92A2EAC248DF9C3D942D66416D8D0C4F80DA7DC6.pdf
SSM6K208FE,LF
Hersteller: Toshiba
MOSFETs Small Signal MOSFET N-ch VDSS=30V, VGSS=+/-12V, ID=1.9A, RDS(ON)=0.133Ohm a. 4.0V, in ES6 package
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH