SSM6K208FE,LF Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 30V 1.9A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
auf Bestellung 3980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1.00 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.40 EUR |
| 500+ | 0.30 EUR |
| 1000+ | 0.27 EUR |
| 2000+ | 0.24 EUR |
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Technische Details SSM6K208FE,LF Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V.
Weitere Produktangebote SSM6K208FE,LF
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SSM6K208FE,LF | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 1.9A ES6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V |
Produkt ist nicht verfügbar |
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SSM6K208FE,LF | Hersteller : Toshiba |
MOSFETs Small Signal MOSFET N-ch VDSS=30V, VGSS=+/-12V, ID=1.9A, RDS(ON)=0.133Ohm a. 4.0V, in ES6 package |
Produkt ist nicht verfügbar |