SSM6K404TU,LF Toshiba
Hersteller: Toshiba
MOSFETs Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=3.0A, RDS(ON)=0.055Ohm at 4V, in UF6 package
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SSM6K404TU,LF Toshiba
Description: MOSFET N-CH 20V 3A UF6, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Part Status: Active, Supplier Device Package: UF6, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SSM6K404TU,LF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SSM6K404TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A UF6 Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SSM6K404TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 3A UF6 Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SSM6K404TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SSM6K404TU,LF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3A UF6
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 4V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH