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SSM6K405TU,LF

SSM6K405TU,LF Toshiba

SSM6K405TU_datasheet_en_20221201-1627270.pdf Hersteller: Toshiba
MOSFETs Small Signal MOSFET N-ch VDSS=20V, VGSS=+/-10V, ID=2.0A, RDS(ON)=0.126Ohm a. 4V, in UF6 package
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.65 EUR
10+0.46 EUR
100+0.23 EUR
1000+0.18 EUR
3000+0.13 EUR
Mindestbestellmenge: 5
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Technische Details SSM6K405TU,LF Toshiba

Description: MOSFET N-CH 20V 2A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V.

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SSM6K405TU,LF SSM6K405TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=10279&prodName=SSM6K405TU Description: MOSFET N-CH 20V 2A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
34+0.53 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.20 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K405TU,LF SSM6K405TU,LF Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=10279&prodName=SSM6K405TU Description: MOSFET N-CH 20V 2A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH